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--- plasmalab_90 [2012/04/11 09:28] – boltje
+++ plasmalab_90 [2018/06/08 07:06] (current) – [Description] scholma
@@ Line 11: / Line 11: @@
 The system has a loadlock and fully automated loading/unloading that allows use of toxic gases.
-Current configuration: Fluorine etcher, SF6, CF4, O2, Ar, N2.
+==== Current gas configuration ====
+  * SF6
+  * CF4
+  * O2
+  * Ar
+  * CHF3
+  * empty slot
 ====== Manual PlasmaLab 90+ ======
 The technical logbook can be found [[PlasmaLab 90+ logbook|here]]
@@ Line 91: / Line 97: @@
 ====== Etching rates ======
-^ Material ^  Date    ^ Sample ID ^ Thickness ^ Etching time  ^ Recipe ^ Gas ^ Rate           ^
+^ Material^  Date   ^ User ^ Thickness ^ Etching time  ^ Power ^ Pressure ^ Gasses [sccm] ^ Etch-Rate ^
-| PMMA    | 20050311 |    bla  |  bla    | 3:52       |  10  | O2, 50 mtorr | 0.215 nm/sec |
+| MoGe    | 01.03.2012 |       | 19.4    | 30s           | 100W  | 75mtorr  | CF4(30) / Ar(10)        | 0.65 nm/s |
-| MoGe    | 20120301 | MoGe_RIE | 19.4  | 30s        | 100W, 75mtorr | CF4 30sccm, Ar 10 sccm | 0.65 nm/s |
+| SiO2    | 15Jan2018 | Douwe | multiple| multiple      | 150W  | 30mtorr  | O2(3) / Ar(10) / CHF3(15) | 16nm/min (0.27nm/sec) |
+| PMMA 950K  | 15Jan2018 | Douwe | multiple| multiple      | 150W  | 30mtorr  | O2(3) / Ar(10) / CHF3(15) | 74nm/min (1.23nm/sec) |
 \\
 To ash PMMA/MMA double layer resist and/or clean your SiO2 chip from any other organic crap, use 20 min in 30Torr O2 plasma (30sccm flow, 16'C sample temp.)