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--- optical_lithography [2008/07/24 12:39] – knaap
+++ optical_lithography [2019/10/08 09:41] (current) – [Spin coater] scholma
@@ Line 18: / Line 18: @@
-====== Spin coater ======
-The spin coater has 2 standard recipes. To change recipe, you need to operate on the keyboard of the spin coater (that has no labels anymore). The keyboard has 10 buttons in 2 rows.
-^ 1 | 2 |
-^ 3 | 4 |
-^ 5 | 6 |
-^ 7 | 8 |
-^ 9 |10|
-To change the recipe press the buttons in the following way:
-  - 1 edit.
-  - 10 change recipe.
-  - 7 (-) or 8 (+) to adjust.
-  - 2 end edit.
-  - use recipe 1 or 2 for optical resist.
@@ Line 40: / Line 25: @@
   - put the sample on the hot plate and time the process.
   - the time you need depends on the kind of resist.
@@ Line 50: / Line 36: @@
   - Slide the mask holder in the mask aligner and switch knob 'mask'.
   - Put your sample in and align roughly.
+  - If you want to know the dimensions of the structures, you can find schemes of the most frequently used masks on the spin coater bench ('tsutomu' mask, 'cip' mask and 'hall' mask).
   - There are two handles at the left. The lower one should be set to 'contact'.
   - Now you can turn the upper one.
@@ Line 67: / Line 54: @@
   - Rinse in water.
   - Dry with N<sub>2</sub> and be careful not to damage your structure.
@@ Line 75: / Line 63: @@
   - Clean the spin coater.
   - Clean up the glasses you used for the developer. It is not necessary to put developer in the waste bottle.
+  - Fill in the log book.
 ====== Resists ======
-^ Resist ^ Spin coater ^ Baking ^ Developing ^
+^  Resist  ^  Spin coater  ^  Baking  ^  Developing  ^  Remarks  ^
-| AZ5214E | 4000/6000rpm | 90 2.5 min | 50% AZ312MIF + 50% H<sub>2</sub>O, 40 s |
+|  AZ5214E  |  4000/6000rpm  |  90 C, 2.5 min  |  50% AZ312MIF + 50% H<sub>2</sub>O, 40 s  |  -  |
+|  HPR205  |  4000/6000rpm  |  90 C, 2.5 min  |  50% AZ312MIF + 50% H<sub>2</sub>O, 40 s  |  -  |
+|  MaN1410  |  3000rpm,30-45 s  |  90 C, at least 90 s  |  MaD533, 15 s  |  negative photoresist  |
+|  MaP1205  |  4000/6000rpm  |  100 C, 30 s  |  90% MaD532 + 10% H<sub>2</sub>O, 30 s  |  100% MaD532 can also be used, takes 10-15 s  |
+Removing resist after etching and lift-off can be done in acetone.
+====== Mask fabrication  ======
+The mask aligner uses 2.5" masks. We order 5" masks in Twente so that's 4 2.5" masks. You can design masks with the program clewin.
+Click on the link to get it: {{:clenwin.zip|}}
+====== Technical stuff =======
+Lamp type: 030W7 HBO 200W mercury vapor lamp