Differences

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--- ebpg_raith [2017/06/29 10:14] – scholma
+++ ebpg_raith [2018/05/22 12:08] (current) – removed scholma
@@ Line 1: / Line 1: @@
-Some resists can be used as both e-beam and photoresists.
-===== Positive Resists =====
-==== AR-P 672.045 ====
-  * spin at 4000rpm
-  * bake at 180ºC for 2 min
-  * e-beam 20kV
-  * develop MIBK/IPA (1:3) 30s
-  * stop IPA 30s
-==== AR-P 617.03 ====
-==== AR-P 642.06 ====
-==== AR-P 662.04 ====
-==== AR-P 662.06 ====
-==== AR-P 6200.09 ====
-===== Negative Resists =====
-==== AR-N 7500.08  ====
-==== AR-N 7500.18 ====
-==== AR-N 7700.08 ====
-  * spin at 4000rpm
-  * bake at 85ºC for 1 min
-  * e-beam 20kV at least 24ųC/cm^2
-  * prebake 100ºC for 2 min
-  * develop AR300-47 30s
-  * stop demiwater 30s
-==== AR-N 7700.18 ====
-===== Other =====
-==== Conductive Polymer PEDOT:PSS ====
-  * spin at 4000 rpm
-  *