Differences

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--- deposition_processes_and_rates [2025/01/16 13:18] – [Calibrations] wigbout
+++ deposition_processes_and_rates [2025/04/01 16:15] (current) – [Target Configuration] sander
@@ Line 22: / Line 22: @@
    * Rate (nm/s or nm/A)
+All deposition systems:
    * [[UHV system#deposition_rates|UHV sputtering system]]
    * [[Z-400#deposition_rates Z406|Z-400 sputtering system]]
-   * [[Oxides system#deposition_rates|Oxide epitaxy system]]
    * [[ATC-1800#deposition_rates|ATC-1800F sputtering system]]
-   * [[K-Cell evaporator#deposition_rates|K-cell evaporator]]
+   * [[Oxides system#deposition_rates|Oxide epitaxy system]]
+   * [[K-Cell evaporator#deposition_rates|K-cell evaporator]]
+   * [[E-beam evaporator|E-beam evaporator]]
+====== Target Configuration ======
+[[https://leidenuniv1-my.sharepoint.com/:x:/g/personal/leeuwenacvan_vuw_leidenuniv_nl/EdNkciJ646lJtmdnTpgr1hAB3oOvtc4S-3PkJGZG5VUbsA?e=g5PbaB|Target Planning]]