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--- deposition_processes_and_rates [2006/04/16 19:36] – adjusted for new dokuwiki version hessel
+++ deposition_processes_and_rates [2025/04/01 16:15] (current) – [Target Configuration] sander
@@ Line 1: / Line 1: @@
-====== A note about deposition rates ======
+====== A note about deposition ======
+The sputtering of thin films has some advantages over vapor deposition:
+  - Sputtered films **adhere more strongly** to substrates than vapor deposited films, due to the high kinetic energies with which the atoms impinge upon the substrate (1-100 eV for sputtering, 0.1-0.5 eV for evaporation).
+  - Sputtered films are typically denser and more uniform.
+  - The sputtering process is more versatile. The target may be composed of alloys or composite materials in addition to pure metals. Furthermore, //reactive sputtering// is a well established technique for creating compound materials such as NbTiN.
+  - Both conductive (metals, alloys) and nonconductive (dielectrics, insulators) films may be deposited. (Although
+  - The process may be used in a reverse mode just to clean the surface of the substrates prior to sputtering.
+  - Sputtering is isotropic, thus covering step-edges, whereas vapor deposition is line-of-sight, enabling techniques such as //shadow evaporation//.
+====== Calibrations ======
+For machines that do not have [[Quartz_Crystal_Monitors|quartz crystal monitors]] (which most sputtering system generally don't, while vapor deposition systems generally do have this), thickness calibrations are necessary every once in a while. Such calibrations can be found on the page of each deposition system.
+It is crucial to include **all** relevant information about the process.
-The calibrations can be found on the page of each deposition system.
-It is crucial to include **all** relevant informantion about the process.
 A calibration should always include:
    * Date of sample fabrication
@@ Line 11: / Line 22: @@
    * Rate (nm/s or nm/A)
-====== To the calibrations ======
+All deposition systems:
    * [[UHV system#deposition_rates|UHV sputtering system]]
-   * [[Z-400#deposition_rates|Z-400 sputtering system]]
+   * [[Z-400#deposition_rates Z406|Z-400 sputtering system]]
-   * [[Oxides system#deposition_rates|Oxide epitaxy system]]
    * [[ATC-1800#deposition_rates|ATC-1800F sputtering system]]
-   * [[K-Cell evaporator#deposition_rates|K-cell evaporator]]
+   * [[Oxides system#deposition_rates|Oxide epitaxy system]]
-   * [[E-gun evaporator#deposition_rates|UHV E-gun evaporator]]
+   * [[K-Cell evaporator#deposition_rates|K-cell evaporator]]
+   * [[E-beam evaporator|E-beam evaporator]]
+====== Target Configuration ======
+[[https://leidenuniv1-my.sharepoint.com/:x:/g/personal/leeuwenacvan_vuw_leidenuniv_nl/EdNkciJ646lJtmdnTpgr1hAB3oOvtc4S-3PkJGZG5VUbsA?e=g5PbaB|Target Planning]]