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z-400

Table of Contents

Description

The Leybold Z-400 is an RF diode sputtering system equipped with 3 3“ targets. It has a background pressure of 1e-5 mbar and a deposition pressure of ca. 5e-3 - 8e-2 mbar. The 2 substrate tables are water cooled and can hold substrates up to 3”. The system is equipped with 3-channel gas blending for Ar, N2 and O2. The substrate tables can be RF-biassed for RF bias sputtering or ion etching.

Manual

WARNING! there is only 1 way to damage the Z-400, that is by changing the HV target selector while HV is on. This will destroy the klystron tube and literally explode the capacitors surrounding it resulting in many months of downtime due to the very long delivery time of these expensive components.

Switch off the pumps

  1. Check that the mass flow controller valve is closed (indicated by CloseMFC in the software)
  2. Close the green valve while holding the tubing (until the arrow points in the middle of the red marker). It needs to be tight, the valve has a end stop
  3. Target cooling water should be turned off
  4. Check that the HV is off (off button on the power supply) and the power supply is off (red turning knob)
  5. Switch off turbo and rotary pump with the 'vacuum switch'

Vent the chamber

  1. Decelerate the turbo by slowly venting to 5 mbar using the needle valve and closing it at 5 mbar.
  2. WAIT 5 MINUTES.
  3. Now, vent the chamber completely to atmospheric pressure and close the vent valve.
  4. Open the flip-top lid.

Mount substrates

  1. The right substrate table is preferred, use the one at the left if needed.
  2. You can use silver paint for thermal contact (dry time: >15 minutes), remove sample with a thin Gilette™ razor when you're done and clean substrate table with acetone.
  3. SEM stubs with samples on them can be loaded on the right table if your sample is not too thick (1 mm max).

Pump down

  1. Close the flip-top lid.
  2. Start vacuum
  3. When the pressure drops below 1e-2 mbar, open the green valve (use both hands) to keep the gas line clean.
  4. Pump down to base pressure <8e-5mbar (pressure interlock ensures you cannot start power supply if base pressure wasn't achieved)

Sputter

  1. Note background pressure in logbook.
  2. Switch on target cooling water
  3. Sputtering process
    1. Select target with HV target selector knob (left of the chamber)
    2. never operate HV target selector with HV on
    3. Switch on power supply (red turning knob). It takes 2 minutes for the RF generator to warm up.
    4. Check the timings and positions for the (pre) sputtering, note this in the logbook.
    5. Set the target to the pre sputter position.
    6. Set the Argon flow setpoint (using the software, usually around 30-50 sccm)
    7. Check that the desired pressure is reached (typically 5E-3 mbar), if not adjust the flow accordingly.
    8. Set the DC voltage meter scale to 1 kV (right display).
    9. Turn the HV setpoint to zero (black knob on power supply).
    10. Turn HV on (two on/off buttons).
    11. Set 500 V RF (2nd display from the left, 5 kV scale).
    12. Increase the flow setpoint temporarily to 70 sscm and check that the pressure rises.
    13. Wait until the plasma ignites (right display shows non-zero value).
    14. check that the ignited target is at pre sputter position (look through window, purple glow at front position).
    15. Next set the flow to the original value and check that the pressure stabilizes at 5E-3 mbar.
    16. Set the DC potential to the desired value (typically 1 kV).
    17. With the pressure and the plasma stable, start your process (pre sputtering, sputtering with the correct timings and positions).
    18. When the process is finished (ignited target again at pre sputter position) set the HV setpoint to zero.
    19. Switch off HV (red HV off button).
    20. If you want to sputter a different material now, redo the procedure from step I.

End

  1. Close the MFC ('CloseMFC' button in software).
  2. Switch off HV power supply (left red turning knob).
  3. Switch off target cooling water.
  4. Close green valve (hold the gasline with one hand).
  5. Let a cooled substrates warm up before venting the chamber.
  6. vent the chamber (see above)
  7. remove sample and clean sputterplate if you used silverpaint to glue the sample
  8. pump down (make sure to open the green valve below 1e-2mbar before leaving the lab)

Target Materials

The following materials are available:

  • Ag
  • Al
  • Al2O3
  • Au
  • Co
  • Cr
  • Cu
  • Cu99Bi0.5
  • Fe
  • FeGe
  • GdNi
  • Hf
  • ITO
  • MoGe
  • Mo
  • Nb
  • NbGe
  • Ni
  • Pt
  • Py
  • Si
  • Si3N4
  • SiO2
  • SiO2 Cu
  • Ta
  • TaCu
  • Ti
  • W

Recipes & Instructions

Z-400 Flat Au on MoGe

Miscellaneous

The digital version of the log sheet: z400logbook.pdf

Deposition rates Z406

Material Date User Pressure DC Potential Flow Time Measurement Result Rate Notes
Al 20120522 Boltje 1kV 50 sccm Ar 148 s X-ray 22.5 nm 9.1 nm/min
Al 20080514 Jorina 1kV 25% Ar 10min X-ray 80 nm 8 nm/min
Al 20100520 Boltje 4e-3 mbar 500V ~25% Ar 10 min X-ray 25.6 nm 2.6 nm/min
Al 20110606 Boltje 1kV 50 sccm Ar 4 min X-ray 38 nm 9.5 nm/min
Al 20151007 Timothy 4.9e-3 mbar 1kV 49 sccm 3 min X-Ray 30.0 nm 10.0 nm/min
Al2O3 20120606 Boltje 1kV 60 sccm Ar, 10% O2 5 min X-ray 9.2 nm 1.8 nm/min
Al2O3 20050127 Gertjan 1kV 25% Ar 2min RBS 8 nm 4 nm/min
Al2O3 20100519 Boltje 4e-3 mbar 1kV ~25% Ar 15 min X-ray 32.4 nm 2.2 nm/min
Al2O3 20111028 Boltje 0.5 kV 50 sccm Ar 15min X-ray 10.7 nm 0.71 nm/min
Ag 20111014 Boltje 1kV 50 sccm Ar 2min X-ray 38.2 nm 19.1 nm/min
Au 20120404 Boltje 1kV 50 sccm Ar 3min X-ray 45.6 nm 15.2 nm/min
Au 20100330 Boltje 1kV ~25 Ar 3min X-ray 54.3 nm 18.1 nm/min
Au 20110202 Boltje 1kV 50 sccm Ar 2min X-ray 29.1 nm 14.6 nm/min
Au 20111206 Boltje 1kV 50 sccm Ar Xmin X-ray 51.4 nm 15.0 nm/min
Au 20120402 Boltje 1kV 50 sccm Ar 80sec X-ray 19.2 nm 14.4 nm/min
Co 20111207 Boltje 1kV 50 sccm Ar 545sec X-ray 63.1 nm 6.95 nm/min
Co 20100331 Boltje 1kV 25% Ar 3min X-ray 16.5 nm 5.5 nm/min
Co 20110104 Boltje 1kV 50 sccm Ar 10min X-ray 63.9 nm 6.4 nm/min
Cr 20090709 Boltje 1kV 25% Ar 4min X-ray 30.0 nm 7.5 nm/min
Cr 20141111 Boltje 3e-5 mbar 1kV 48 sccm 80 s X-Ray 12.8 nm 9.6 nm/min
Cu 20120606 Boltje 1kV 50 sccm Ar 3min X-ray 37.6 nm 12.5 nm/min
Cu 20100203 Boltje 1kV 25% Ar 5min X-ray 63 nm 12.6 nm/min
Cu 20110111 Boltje 1kV 50 sccm Ar 5min X-ray 57.6 nm 11.5 nm/min
Cu 20111206 Boltje 1kV 50 sccm Ar 5min X-ray 58.2 nm 13.4 nm/min
Cu 20120404 Boltje 1kV 50 sccm Ar 5min X-ray 51.5 nm 10.3 nm/min
Cu-etch 20120606 Boltje 50 sccm Ar 3 min X-ray 2.1 nm 0.7 nm/min 60W
Cu99.5Bi0.5 20150429 Boltje 3e-5 mbar 1kV 50 sccm Ar 120s X-Ray 22.0 nm 11.0 nm/min
Co 20120404 Boltje 1kV 50 sccm Ar 10min X-ray 68.0 nm 6.8 nm/min
Fe 20100407 Boltje 1kV 25% Ar 4min X-ray 22.0 nm 5.5 nm/min
MoGe 2007 Edoardo 1kV 25% Ar 15mins* X-ray 84.2 nm 5.6 nm/min * no pauses, silver paint
MoGe 20080204 Ivan & Edo 1kV 25% Ar 18 mins* X-ray 86 nm 4.8 nm/min *pauses (1min)
MoGe 20110415 Boltje 1kV 50 sccm Ar 10min X-ray 55.3 nm 5.5 nm/min
MoGe* 20110816 Boltje 1kV 50 sccm Ar 10min X-ray 51.5 nm 5.2 nm/min
MoGe 20170327 Jean-Pierre 4.9e-3 mbar 1kV 49 sccm 25 min Profilometer 137 nm 5.5 nm/min
Nb65Ge35 2005 Bas v Leewuwen 1kV 25% Ar - X-ray - 4.89 nm/min
Nb65Ge35 2004 Tibi <3e-6 mbar 1kV 25% Ar 6 min X-ray 28 nm 4.67 nm/min
NbN 20111212 Boltje 1.0 kV 18% Ar, 10% N2* x min X-ray 71.3 nm 3.56 nm/min * no blend
NbN 20050126 Gertjan 1.7 kV 18% Ar, 10% N2* 8 min RBS/X-ray 60/75nm 7.5-9 nm/min * blend
NbN 20050124 Olaf 1.0 kV 18% Ar, 10% N2* 1356s X-ray 49.5 nm 2.2 nm/min * no blend
NbN 20080310 Jorina 1.0 kV 18% Ar, 10% N2* 22min 42s X-ray 55.15 nm 2.4 nm/min * no blend
Ni 20110114 Boltje 1kV 50 sccm Ar 9min X-ray 58.8 nm 6.5 nm/min
Ni 20140325 Boltje 3e-5 mbar 1 kV xx sccm 5 min X-Ray 43.5 nm 8.70 nm/min
NiGd 20051024 ? 1kV 25% Ar X-ray 67.5 nm 6.8 nm/min
Pt 20110307 Boltje 0.5kV 50 sccm Ar 10 min X-ray 15.6 nm 1.56 nm/min
Pt 20120612 Boltje 1kV 50 sccm Ar 10 min X-ray 67.9 nm 6.8 nm/min
Pt 20061113 Chris 0.5kV 25% Ar 2mins X-ray 5.0 nm 2.5 nm/min
Py 20161223 Mechielsen 1kV 50 sccm Ar AFM 7.9 nm/min
Py 20170220 Casper 4.8e-3 mbar 1kV 49 sccm xx min X-ray 585 nm 7.8 nm/min
Si 20150422 Boltje 5e-3 mbar 1 kV 49 sccm 3 min X-Ray 23.0 nm 7.66 nm/min
Si3N4 20120522 Boltje 1kV 50 sccm Ar 469 s X-ray 36.0 nm 4.6 nm/min
Si3N4 20110609 Boltje 1kV 50 sccm Ar 8 min X-ray 31.8 nm 4.0 nm/min
Si3N4 20120522 Boltje 1kV 50 sccm Ar 469 s X-ray 36.0 nm 4.6 nm/min
SiO2 20131114 Boltje 5e-3 mbar 1kV 38 sccm 5 min X-Ray 15.4 nm 3.08 nm/min
Ti 20160428 Annette 5.1e-3 mbar 1kV 49 sccm 10 min profilometer 30 nm 3.0 nm/min
W 20060116 Vincent 1kV 25% Ar 10 min X-ray 38.5 nm 3.9 nm/min

* repaired target, with a few new Ge pieces

Deposition rates Z407

Material Date User Pressure DC Potential Flow Time Measurement Result Rate Notes
z-400.txt · Last modified: 2021/12/02 08:51 by scholma
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