ebpg_raith
This is an old revision of the document!
Table of Contents
Some resists can be used as both e-beam and photoresists.
Positive Resists
AR-P 617.03 (Copolymer)
- spin at 4000rpm
- bake at 200°C for 10 min
AR-P 642.06
- spin at 4000 rpm
- bake at 150 °C for 3 min
AR-P 662.04
AR-P 662.06
- spin at 4000rpm
- bake at 150ºC for 3 min
- e-beam 30kV, 180ųC/cm^2
- develop MIBK/IPA (1:3) 30 sec
- stop IPA, 10 sec
AR-P 672.045 (PMMA 950K)
- spin at 4000rpm
- bake at 180ºC for 2 min
- e-beam 30kV, 300 µC/cm²
- develop MIBK/IPA (1:3) 30s
- stop IPA 30s
AR-P 6200.09 (CSAR 62)
- Bake 150 °C, 60sec hotplate
- e-beam exposure 65 µC/cm²
- develop AR 600-546 60 sec
- stopper AR 600-60 30sec , or IPA
- remover: AR 600-71, AR-300-76
Negative Resists
AR-N 7500.08
AR-N 7500.18
AR-N 7700.08
- spin at 4000rpm
- bake at 85ºC for 1 min
- e-beam 20kV at least 24ųC/cm^2
- prebake 100ºC for 2 min
- develop AR300-47 30s
- stop demiwater 30s
AR-N 7700.18
Other
Conductive Polymer PEDOT:PSS
- spin at 4000 rpm
Optical Resists
| Resist | Spincoater | Baking | Developing | Remarks |
|---|---|---|---|---|
| AZ5214E | 4000/6000rpm | 90 C, 2.5 min | 50% AZ312MIF + 50% H2O, 40 s | - |
| HPR205 | 4000/6000rpm | 90 C, 2.5 min | 50% AZ312MIF + 50% H2O, 40 s | - |
| MaN1410 | 3000rpm,30-45s | 90 C, at least 90s | MaD533, 15 s | negative photoresist |
| MaP1205 | 4000/6000rpm | 100 C, 30 s | 90% MaD532 + 10% H2O, 30 s | 100% MaD532 can also be used, takes 10-15 s |
ebpg_raith.1519298930.txt.gz · Last modified: 2018/02/22 11:28 by scholma