Differences

This shows you the differences between two versions of the page.

--- ebpg_raith [2017/09/18 09:31] – [AR-P 672.045] scholma
+++ ebpg_raith [2018/05/22 12:08] (current) – removed scholma
@@ Line 1: / Line 1: @@
-Some resists can be used as both e-beam and photoresists.
-===== Positive Resists =====
-==== AR-P 617.03 (Copolymer) ====
-  * spin at 4000rpm
-  * bake at 200°C for 10 min
-==== AR-P 642.06 ====
-  * spin at 4000 rpm
-  * bake at 150 °C for 3 min
-==== AR-P 662.04 ====
-==== AR-P 662.06 ====
-==== AR-P 672.045 (PMMA 950K) ====
-  * spin at 4000rpm
-  * bake at 180ºC for 2 min
-  * e-beam 30kV, 300 µC/cm²
-  * develop MIBK/IPA (1:3) 30s
-  * stop IPA 30s
-==== AR-P 6200.09 (CSAR 62) ====
-  * Bake 150 °C, 60sec hotplate
-  * e-beam exposure 65 µC/cm²
-  * develop AR 600-546 60 sec
-  * stopper AR 600-60 30sec , or IPA
-  * remover: AR 600-71, AR-300-76
-===== Negative Resists =====
-==== AR-N 7500.08  ====
-==== AR-N 7500.18 ====
-==== AR-N 7700.08 ====
-  * spin at 4000rpm
-  * bake at 85ºC for 1 min
-  * e-beam 20kV at least 24ųC/cm^2
-  * prebake 100ºC for 2 min
-  * develop AR300-47 30s
-  * stop demiwater 30s
-==== AR-N 7700.18 ====
-===== Other =====
-==== Conductive Polymer PEDOT:PSS ====
-  * spin at 4000 rpm
-  *
-===== Optical Resists ======
-^  Resist   ^  Spincoater     ^  Baking         ^  Developing  ^  Remarks  ^
-|  AZ5214E  |  4000/6000rpm   |  90 C, 2.5 min  |  50% AZ312MIF + 50% H<sub>2</sub>O, 40 s  |  -  |
-|  HPR205   |  4000/6000rpm   |  90 C, 2.5 min  |  50% AZ312MIF + 50% H<sub>2</sub>O, 40 s  |  -  |
-|  MaN1410  |  3000rpm,30-45s |  90 C, at least 90s  |  MaD533, 15 s  |  negative photoresist  |
-|  MaP1205  |  4000/6000rpm   |  100 C, 30 s  |  90% MaD532 + 10% H<sub>2</sub>O, 30 s  |  100% MaD532 can also be used, takes 10-15 s  |