NanoWiki

User Tools

Site Tools

Trace: • deposition_processes_and_rates • targets • glovebox • oxides_system
atc-1800

Differences

This shows you the differences between two versions of the page.

Link to this comparison view

Both sides previous revisionPrevious revision
Next revision		Previous revision
atc-1800 [2023/02/03 10:55] – scholmaatc-1800 [2025/02/18 15:15] (current) – [Flat Au films on Mica] wigbout
Line 1: Line 1:
 ====== ATC Sputtering System manual ======= ====== ATC Sputtering System manual =======
 +{{ ::atc_and_atc_orion_manual_-_march_2009_-_ce.pdf |Link to the manual}}
  
 ====== Description ====== ====== Description ======
-The ATC-1800 sputtering system is feature-rich 4-magnetron system with +The ATC-1800 sputtering system is feature-rich 4-magnetron system with a large deposition pressure range, 10e-8 mbar range background pressure, substrate heating, substrate RF bias, variable working distance, in-situ gun tilt on all sources, substrate rotation and multi-channel gas blending. The gas inlets are connected to both the chamber 
-a large deposition pressure range, 10e-8 mbar range background pressure, +and the sources. The system has a loadlock for high throughput and a vacuum chamber that is easily accessible for all non-standard work.
-substrate heating, substrate RF bias, variable working +
-distance, in-situ gun tilt on all sources, substrate rotation and +
-multi-channel gas blending. The gas inlets are connected to both the chamber +
-and the sources. The system has a loadlock for high throughput and a +
-vacuum chamber that is easily accessible for all non-standard work.+
  
 ===== DONT's ===== ===== DONT's =====
-  * **Never make a modification** to the system without consulting [[marcel_hesselberth|me]] +  * **Never make a modification** to the system without consulting a technician 
-  * **Never transfer a hot sample holder** (cold is, say, 150 degrees C)+  * **Never transfer a hot sample holder** (cold is, say, 50 °C)
   * **Never hot-switch the switchbox** (switch off power first!)   * **Never hot-switch the switchbox** (switch off power first!)
   * **Never exceed 50W RF power for substrate bias**   * **Never exceed 50W RF power for substrate bias**
   * **Never transfer a sample without checking that BOTH loadlock and chamber are at vacuum (<1e-6 mbar)**   * **Never transfer a sample without checking that BOTH loadlock and chamber are at vacuum (<1e-6 mbar)**
   * **Never sputter without a sample holder in place**   * **Never sputter without a sample holder in place**
-  * **Do not stick lamps with magnets on the painted frame of the system** 
  
 ===== Do's ===== ===== Do's =====
   * write the logbook   * write the logbook
 +  * keep an eye on changing voltage to indicate you sputtered through the target
  
 ===== Before you start ===== ===== Before you start =====
Line 29: Line 25:
 ===== Venting the loadlock and loading the substrates ===== ===== Venting the loadlock and loading the substrates =====
   - Wear //powder free// gloves!    - Wear //powder free// gloves! 
-  - Clean the substrates with demi-water (if necessary), then acetone and finally IPA +  - **Check if the gate valve between the chamber and the loadlock is closed** before venting the loadlock 
-  - Mount the substrates on the sample holder. +  - Vent loadlock to get the sample holder 
-  - **Check if the valve between the chamber and the loadlock is closed** before venting the loadlock +    - Switch off the loadlock pumpgroup 
-  - Switch off the loadlock pumpgroup +    - In small steps introduce N<sub>2</sub> in the loadlock  
-  - When the top pops up close venting N<sub>2</sub> valve +  - Mount the substrates on the sample holder with silverpaint, leave paint to dry at least 5min 
-  - Put the sample holder in the loadlock with the alignment slit towards the right viewport. Always wear powderfree gloves!+  - Put the sample holder in the loadlock with the alignment slit towards the right viewport. 
   - Close the loadlock   - Close the loadlock
  
Line 44: Line 40:
 ===== Transfer ===== ===== Transfer =====
   - Check whether both chamber and loadlock are at vacuum   - Check whether both chamber and loadlock are at vacuum
-  - Open the loadlock valve+  - Open the gate valve 
 +  - make sure sample stage is completely up
   - Slide the magnetic drive slowly until the end stop   - Slide the magnetic drive slowly until the end stop
   - Rotate the propeller to align it with the slits in the sample holder   - Rotate the propeller to align it with the slits in the sample holder
-  - Lower the sample heating block carefully: be very careful not to bend the transfer arm+  - Lower the sample stage carefully: be very careful not to bend the transfer arm
   - Rotate the propeller __clockwise__ manually, **DO NOT USE FORCE**   - Rotate the propeller __clockwise__ manually, **DO NOT USE FORCE**
-  - Pull the sampleholder up using the joystick, rotate to see if it's levelled +  - Pull the sample stage up one cm using the joystick, rotate to see if it's levelled 
-  - Raise the sample heating block + sampleholder all the way up+  - Raise the sample stage all the way up
   - Switch on rotation (if rotation speed>40, higher risk of dropping the sample holder during heating)   - Switch on rotation (if rotation speed>40, higher risk of dropping the sample holder during heating)
   - Slide back the magnetic drive slowly until the end stop   - Slide back the magnetic drive slowly until the end stop
-  - Close the loadlock valve+  - Close the gate valve 
 +  - Lower sample stage fully (or to desired working distance)
  
 ===== Sputtering ===== ===== Sputtering =====
   - Set the substrate temperature to the desired value, let the heater bake until the desired pressure/Temperature is reached   - Set the substrate temperature to the desired value, let the heater bake until the desired pressure/Temperature is reached
   - Set the switchbox to the desired gun   - Set the switchbox to the desired gun
-  - Create a shutter program if desired 
   - Open the gases you need on the touch screen   - Open the gases you need on the touch screen
   - Set the gasflows   - Set the gasflows
-  - Switch to the capacitance gauge (CH2) +  - Switch the VAT-valve to pressure mode (typical setpoint is 5mTorr) 
-  - Switch the VAT-valve to pressure mode +  - close shutters of chamber before sputtering 
-  - Presputter at the sputtering current +  - set the settings on the power supply (to not go over ~500V/100W) 
-  - If RF/bias is needed, switch off the gun, set the pressure to 25 ubar, ignite the bias, set the pressure to the process value, adjust RF matching and restart the gun +  - press start on power supply to ignite plasma 
-  - Run the shutter program or operate the shutters manually+  - Presputter with shutter closed 
 +  - If RF/bias is needed, switch off the gun, set the pressure to 25 µbar, ignite the bias, set the pressure to the process value, adjust RF matching and restart the gun 
 +  - Open shutter and start timer
   - When done, switch off the gun and bias immediately   - When done, switch off the gun and bias immediately
   - Switch off the heater and gases (probably you also want to do this immediately)   - Switch off the heater and gases (probably you also want to do this immediately)
-  - Open VAT-valve+  - Open VAT-valve fully 
   - Switch off rotation   - Switch off rotation
-  - When the sample heating block has cooled, transfer your sample to loadlock+  - When the sample stage has cooled to <50°C, transfer your sample to loadlock
  
 ===== Removing the sample ===== ===== Removing the sample =====
-  - Transfer the sample out (see transfer)+  - Move sample stage fully up  
 +  - Open gate valve 
 +  - Move transfer arm to end stop 
 +  - lower sample stage and drop sample holder on transfer arm 
 +  - Put sample stage fully up 
 +  - move transfer arm to the loadlock 
 +  - close gate valve
   - Vent the loadlock as described above in order to remove your samples   - Vent the loadlock as described above in order to remove your samples
   - **Check whether the sample holder is really cold**   - **Check whether the sample holder is really cold**
-  - Remove the sampleholder and pump down the loadlock as described above+  - Remove the samples from the sample holder, put sample holder back and pump down the loadlock as described above
   - Fill out the logbook with all required information.    - Fill out the logbook with all required information. 
  
Line 82: Line 87:
  
 ====== Common problems and tips&tricks ===== ====== Common problems and tips&tricks =====
 +  * power supply is off:
 +    * not all safety interlocks are met (cooling water flow or pressure)
 +  * flickering, unstable plasma
 +    * optimize process conditions
 +    * to thick backing plate
 +  * cannot ignite plasma
 +    * to thick backing plate
 +    * optimize process conditions
 +    * faulty power supply
 +    * target not conducting
  
 +
 + 
 ====== Deposition rates ====== ====== Deposition rates ======
 Source tilt angle, substrate angle and source-substrate distance are process parameters that should be mentioned here! Source tilt angle, substrate angle and source-substrate distance are process parameters that should be mentioned here!
Line 176: Line 193:
 loading into ATC. Use a Cu holder for the mica, no adhesives loading into ATC. Use a Cu holder for the mica, no adhesives
  
-Pressure +  * Pressure: 20 mTorr setpoint, low -7 background 
- +  * Ar Flow: 24 
-20 mTorr setpoint, low -7 background +  * Temperature: 300deg C for deposition.  
- +  * Current: 200 mA for 20 minutes, then 2 minutes 45 mA 
-Ar Flow +  * Voltage: Around 500 / 380 
- +  * O2 flow: 1 
-24 +  * Heating/cooling rate: Heating: Heat up before deposition to 450  to bake out the dirt from chamber, holder & substrate. Radiative cooldown to 300 for deposition. Anneal for 1-2hrs postdeposition at 300. Cooldown radiative by switching off heat. 
- +  * RMS roughness (and better roughness data if available): I think a picture says more than 1000 roughness values. Picture: stm image in air, with a lot of vibrations. Image size 740x640 nm. Shows the typical variation of terrace sizes you find on these samples.
-Temperature +
- +
-300deg C for deposition.  +
- +
-Current +
- +
-200 mA for 20 minutes, then 2 minutes 45 mA +
- +
-Voltage +
- +
-Around 500 / 380 +
- +
-O2 flow +
- +
-1 +
- +
-Heating/cooling rate +
- +
-Heating: Heat up before deposition to 450  to bake out the dirt from +
-chamber, holder & substrate. Radiative cooldown to 300 for deposition. +
-Anneal for 1-2hrs postdeposition at 300. Cooldown radiative by switching +
-off heat. +
- +
-and +
- +
- +
- +
-RMS roughness (and better roughness data if available) +
- +
-I think a picture says more than 1000 roughness values.. +
- +
- +
- +
-Picture: stm image in air, with a lot of vibrations. Image size 740x640 +
-nm. Shows the typical variation of terrace sizes you find on these +
-samples. +
- +
- +
- +
  
 Note 1: This recipe has been taken over (mutatis mutandis) from the Note 1: This recipe has been taken over (mutatis mutandis) from the
atc-1800.1675421707.txt.gz · Last modified: 2023/02/03 10:55 by scholma
Donate Powered by PHP Valid HTML5 Valid CSS Driven by DokuWiki